to-2 51 6 plastic-encapsulate mosfets cj d 04n60 600v n-channel power mosfet general description this advanced high voltage mo sfet is designed to wighstand high energ y in the avalanche mode an d switch efficiently. this new high energy device also offers a dr ain-to-source diode wigh fast recovery time. desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. feature z high current rating z lower r ds(on) z lower capacitance z lower total gate charge z tighter vsd specifications z avalanche energy specified maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 600 gate-source voltage v gss 30 v continuous drain current i d 4.0 continuous drain- source diode forward current i s 4.0 a single pulsed avalanche energy (note1) e as 26 0 mj thermal resistance fromjunction to ambient r ja 100 operating and storage temperature range t j, t stg -55 ~+150 maximum lead temperure for soldering purposes , 1/8?from case for 5 seconds t l 260 to- 251 6 1. gate 2. drain 3. source /w 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,apr,2014
a, nov ,201 1 electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit off characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 600 drain-source diode forward voltage(note2) v sd v gs = 0v, i s =4.0a 1.5 v zero gate voltage drain current i dss v ds =600v, v gs =0v 25 a gate-body leakage current, forward(note2) i gssf v ds =0v, v gs =30v 100 gate-body leakage current, reverse(note2) i gssr v ds =0v, v gs =-30v -100 na on characteristics (note2) gate-threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-resistance r ds(on) v gs =10v, i d =2.0a 2.0 3.0 ? forward transconductance g fs v ds =50v, i d =2a 2. 0 2.6 s dynamic characteristics (note 3) input capacitance c iss 540 760 output capacitance c oss 125 180 reverse transfer capacitance c rss v ds =25v,v gs =0v,f =1mhz 8.0 20 pf switching characteristics total gate charge q g 5.0 10 gate-source charge q gs 2.7 gate-drain charge q gd v ds =480v,v gs =10v,i d =4.0a 2.0 nc turn-on delay time (note3) t d (on) 12 20 turn-on rise time (note3) t r 7.0 10 turn-off delay time (note3) t d(off) 19 40 turn-off fall time (note3) t f v dd =300v, v gs =10v, r g =9.1 ? , i d =4.0a 10 20 ns notes : 1. l= 3 0mh, i l =4 a, v dd =100v, v gs =10v,r g =25 ? ,starting t j =25 . 2. pulse test : pulse wi dth 300s, duty cycle 2%. 3. these parameters have no way to verify. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,apr,2014
01234567 0.0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 0 1 2 3 4 5 0.0 0.4 0.8 1.2 1.6 1e-3 0.01 0.1 1 24681012 0 4 8 12 16 012345 0 1 2 3 4 5 0 10203040 0 1 2 3 4 5 6 v ds =10v pulsed drain current i d (a) gate to source voltage v gs (v) transfer characteristics t a =100 t a =25 i d =250ua threshold voltage threshold voltage v th (v) junction temperature t j ( ) 4 pulsed source current i s (a) source to drain voltage v sd (v) v sd i s ?? t a =100 t a =25 pulsed i d =2a r ds(on) ?? v gs on-resistance r ds(on) ( ) gate to source voltage v gs (v) t a =100 t a =25 t a =25 pulsed on-resistance r ds(on) ( ) drain current i d (a) i d ?? r ds(on) v gs =10v pulsed CJD04N60 v gs =4v output characteristics drain current i d (a) drain to source voltage v ds (v) v gs = 6v 8v 10v v gs =5v v gs =4.5v 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,apr,2014
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